<?xml version="1.0" encoding="UTF-8"?>
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<title>05EE6003 ADVANCED POWERSEMICONDUCTOR DEVICES</title>
<link href="http://hdl.handle.net/123456789/8187" rel="alternate"/>
<subtitle/>
<id>http://hdl.handle.net/123456789/8187</id>
<updated>2026-04-05T21:43:02Z</updated>
<dc:date>2026-04-05T21:43:02Z</dc:date>
<entry>
<title>DEC 2021</title>
<link href="http://hdl.handle.net/123456789/9542" rel="alternate"/>
<author>
<name/>
</author>
<id>http://hdl.handle.net/123456789/9542</id>
<updated>2022-06-27T22:15:09Z</updated>
<published>2021-12-11T00:00:00Z</published>
<summary type="text">DEC 2021
</summary>
<dc:date>2021-12-11T00:00:00Z</dc:date>
</entry>
<entry>
<title>DES 2019</title>
<link href="http://hdl.handle.net/123456789/8758" rel="alternate"/>
<author>
<name/>
</author>
<id>http://hdl.handle.net/123456789/8758</id>
<updated>2022-06-27T22:16:03Z</updated>
<published>2019-12-10T00:00:00Z</published>
<summary type="text">DES 2019
</summary>
<dc:date>2019-12-10T00:00:00Z</dc:date>
</entry>
<entry>
<title>DES 2018</title>
<link href="http://hdl.handle.net/123456789/8266" rel="alternate"/>
<author>
<name/>
</author>
<id>http://hdl.handle.net/123456789/8266</id>
<updated>2022-06-27T22:15:06Z</updated>
<published>2018-12-24T00:00:00Z</published>
<summary type="text">DES 2018
</summary>
<dc:date>2018-12-24T00:00:00Z</dc:date>
</entry>
<entry>
<title>DES 2017</title>
<link href="http://hdl.handle.net/123456789/8239" rel="alternate"/>
<author>
<name/>
</author>
<id>http://hdl.handle.net/123456789/8239</id>
<updated>2022-06-27T22:22:06Z</updated>
<published>2017-12-10T00:00:00Z</published>
<summary type="text">DES 2017
</summary>
<dc:date>2017-12-10T00:00:00Z</dc:date>
</entry>
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